BSC046N10NS3GATMA1
MOSFET N-CH 100V 17A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC046N10NS3GATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 100V and offers a continuous drain current of 17A at ambient temperature (Ta) and 100A at case temperature (Tc). With a maximum power dissipation of 156W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 4.6mOhm at 50A and 10V, coupled with a gate charge (Qg) of 63 nC at 10V, ensuring efficient switching performance. Input capacitance (Ciss) is rated at a maximum of 4500 pF at 50V. The MOSFET is housed in an 8-PowerTDFN (PG-TDSON-8-7) package for surface mounting. Its operating temperature range is -55°C to 150°C. This component finds application in sectors such as automotive, industrial power supplies, and server power.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 120µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 50 V |