BSC046N02KSGAUMA1
MOSFET N-CH 20V 19A/80A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSC046N02KSGAUMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and supports a continuous drain current of 19A at ambient temperature and 80A at case temperature. With a low on-resistance of 4.6mOhm at 50A and 4.5V Vgs, it offers excellent conduction efficiency. The MOSFET utilizes a TDSON-8 package for efficient thermal management, dissipating up to 48W at the case. Key parameters include a maximum gate charge of 27.6 nC at 4.5V Vgs and an input capacitance (Ciss) of 4100 pF at 10V Vds. Operating across a temperature range of -55°C to 150°C, this component is suitable for use in automotive and industrial power management systems. The drive voltage range for optimal Rds(on) is 2.5V to 4.5V, with a maximum Vgs of ±12V.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 50A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 110µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 10 V |
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