BSC042N03ST
MOSFET N-CH 30V 20A/50A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSC042N03ST is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage and offers a continuous drain current of 20A at ambient temperature and 50A at case temperature. The BSC042N03ST boasts a low on-resistance of 4.2mOhm at 50A and 10V Vgs, achieved through Infineon's advanced MOSFET technology. Its PG-TDSON-8-5 package provides excellent thermal performance for surface mounting. Key electrical characteristics include a gate charge of 28nC at 5V Vgs and an input capacitance of 3660pF at 15V Vds. The device operates over a wide temperature range of -55°C to 150°C. Applications include power management in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 15 V |
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