BSC042N03MSGATMA1
MOSFET N-CH 30V 17A/93A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC042N03MSGATMA1 is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 17A at 25°C ambient and 93A at 25°C case temperature. The low on-resistance of 4.2mOhm at 30A and 10V gate drive is achieved using advanced OptiMOS™ technology. With a maximum power dissipation of 2.5W (Ta) and 57W (Tc), it is suitable for demanding thermal environments. The device is housed in a PG-TDSON-8-5 package, facilitating efficient heat transfer in surface mount designs. Key parameters include a gate charge of 55 nC at 10V and input capacitance of 4300 pF at 15V. This MOSFET is utilized in automotive, industrial power, and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V |
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