BSC0403NSATMA1
150V, N-CH MOSFET, LOGIC LEVEL,Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series BSC0403NSATMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 70 A at 25°C (Tc). The low on-resistance (Rds On) of 11 mOhm at 35 A and 10 Vgs makes it suitable for demanding power management tasks. With a maximum power dissipation of 125 W (Tc) and a gate charge (Qg) of 28 nC at 10 V, it offers excellent switching performance. The BSC0403NSATMA1 is packaged in a PG-TDSON-8-7 for surface mounting, enabling efficient heat dissipation. This component is commonly utilized in automotive, industrial, and server power supply applications where robust performance and thermal management are critical.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 35A, 10 |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 91µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 75 V |
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