BSC0402NSATMA1
MOSFET N-CH 150V 80A TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number BSC0402NSATMA1, offers a 150 V drain-source voltage and a continuous drain current of 80 A at 25°C. This surface mount device, housed in a PG-TDSON-8-7 package, features a low on-resistance of 9.3 mOhm maximum at 40 A and 10 Vgs. The BSC0402NSATMA1 is designed for high-efficiency power switching applications, delivering 139 W continuous power dissipation. Key parameters include a gate charge of 33 nC at 10 Vgs and input capacitance of 2400 pF at 75 Vds. This component is suitable for use in automotive and industrial power supply systems.
Additional Information
Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.3mOhm @ 40A, 10 |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 107µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 75 V |
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