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BSC037N08NS5TATMA1

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BSC037N08NS5TATMA1

MOSFET N-CH 80V 22A/100A TDSON

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ 5 series N-Channel Power MOSFET, part number BSC037N08NS5TATMA1, offers robust performance for demanding applications. This device features a drain-source voltage (Vdss) of 80V and supports a continuous drain current (Id) of 22A at 25°C ambient temperature, scaling to 100A under continuous drain at 25°C case temperature. With a low On-resistance (Rds On) of 3.7mOhm at 50A and 10V Vgs, it minimizes conduction losses. The BSC037N08NS5TATMA1 is housed in an 8-PowerTDFN (PG-TDSON-8-7) package, facilitating efficient thermal management with power dissipation capabilities of 3W (Ta) and 136W (Tc). Key parameters include a maximum gate charge (Qg) of 58 nC at 10V Vgs and input capacitance (Ciss) of 4200 pF at 40V Vds. This MOSFET is suitable for use in automotive and industrial power systems.

Additional Information

Series: OptiMOS™ 5RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id3.8V @ 72µA
Supplier Device PackagePG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 40 V

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