BSC037N025S G
MOSFET N-CH 25V 21A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC037N025S-G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 25V drain-source breakdown voltage (Vdss) and offers exceptional on-resistance of 3.7mOhm at 50A and 10V Vgs. Continuous drain current is rated at 21A (Ta) and 100A (Tc), with maximum power dissipation of 2.8W (Ta) and 69W (Tc). The BSC037N025S-G utilizes the PG-TDSON-8-1 package, a surface mount solution optimized for thermal performance. Key parameters include a gate charge (Qg) of 29 nC at 5V and input capacitance (Ciss) of 3660 pF at 15V. This MOSFET is suitable for demanding applications in automotive, industrial power, and consumer electronics sectors. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 15 V |