BSC034N03LSGATMA1
MOSFET N-CH 30V 22A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies OptiMOS™ BSC034N03LSGATMA1 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage (Vds) and offers a continuous drain current (Id) of 22A at 25°C ambient and 100A at 25°C case temperature. With a low on-resistance (Rds On) of 3.4mOhm maximum at 30A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate charge (Qg) of 52 nC at 10V. Input capacitance (Ciss) is specified at 4300 pF maximum at 15V Vds. The BSC034N03LSGATMA1 is housed in a PG-TDSON-8-5 package for surface mounting, providing excellent thermal performance with a power dissipation of 2.5W (Ta) and 57W (Tc). This MOSFET operates across a temperature range of -55°C to 150°C. It is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V |
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