BSC032N03SG
MOSFET N-CH 30V 23A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC032N03SG is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage and offers a continuous drain current capability of 23A at 25°C ambient and 100A under a 25°C case temperature. The low on-resistance of 3.2 mOhm at 50A and 10V gate-source voltage, combined with a 4.5V to 10V gate drive range, ensures minimal conduction losses. With a maximum power dissipation of 2.8W (Ta) and 78W (Tc), the BSC032N03SG is suitable for demanding thermal environments. The device is housed in an 8-PowerTDFN (PG-TDSON-8-1) package for surface mounting, facilitating compact board designs. Key parameters include a gate charge of 39 nC at 5V and input capacitance of 5080 pF at 15V. This MOSFET is utilized in sectors such as automotive, industrial power supplies, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 15 V |
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