BSC032N03S
MOSFET N-CH 30V 23A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC032N03S is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source voltage (Vdss) and supports continuous drain currents of 23A at ambient temperature (Ta) and 100A at case temperature (Tc). The low on-resistance (Rds On) of 3.2mOhm at 50A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a maximum power dissipation of 2.8W (Ta) and 78W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 39 nC at 5V Vgs and input capacitance (Ciss) of 5080 pF at 15V Vds. The PG-TDSON-8-1 package facilitates efficient surface mounting. Operating temperature range is from -55°C to 150°C (TJ). This component is utilized in industrial power supplies, automotive electronics, and server power management.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 70µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5080 pF @ 15 V |
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