BSC0303LSATMA1
TRENCH >=100V PG-TDSON-8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSC0303LSATMA1, offers 120V drain-to-source voltage and 68A continuous drain current at 25°C. This device features a low on-resistance of 12mOhm at 34A and 10V Vgs, with a maximum power dissipation of 114W. The BSC0303LSATMA1 is designed with TRENCH technology and housed in a PG-TDSON-8 package for surface mounting, utilizing a tape and reel (TR) packaging format. Key electrical parameters include a gate charge (Qg) of 51 nC at 10V and input capacitance (Ciss) of 4900 pF at 60V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power systems requiring efficient switching and high current handling capabilities.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 34A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 72µA |
| Supplier Device Package | PG-TDSON-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 60 V |
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