BSC0302LSATMA1
MOSFET N-CH 120V 12A/99A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 2 BSC0302LSATMA1 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 120V and a continuous Drain Current (Id) of 12A at 25°C ambient and 99A at 25°C case temperature. With a maximum power dissipation of 156W at 25°C case, it offers robust thermal performance. The low on-resistance of 8mOhm at 50A and 10V gate drive is achieved with a 10V gate-source voltage. Key parameters include a typical Gate Charge (Qg) of 79 nC @ 10V and Input Capacitance (Ciss) of 7400 pF @ 60V. The BSC0302LSATMA1 is housed in a PG-TDSON-8-7 package, suitable for surface mounting. This component finds utility in automotive, industrial, and power supply sectors.
Additional Information
Series: OptiMOS™ 2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 99A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 112µA |
| Supplier Device Package | PG-TDSON-8-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 60 V |
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