BSC029N025S G
MOSFET N-CH 25V 24A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSC029N025S-G is an N-Channel Power MOSFET designed for demanding applications. This device features a 25V drain-source voltage and offers a continuous drain current of 24A at 25°C ambient and 100A continuous drain current at 25°C case temperature. The Rds(on) is specified at a maximum of 2.9mOhm at 50A and 10V gate-source voltage. The BSC029N025S-G supports a gate drive range from 4.5V to 10V and has a maximum gate charge of 41 nC at 5V. Maximum power dissipation is 2.8W (Ta) and 78W (Tc). The component utilizes a PG-TDSON-8-1 package for surface mounting, enabling efficient thermal management. This MOSFET is suitable for use in automotive, industrial power supplies, and power management systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5090 pF @ 15 V |
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