BSC026N02KSGAUMA1
MOSFET N-CH 20V 25A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC026N02KSGAUMA1 is an N-Channel OptiMOS™ MOSFET designed for demanding applications. This component features a 20 V drain-to-source voltage (Vdss) and a continuous drain current capability of 25 A at 25°C ambient temperature, scaling to 100 A under continuous case temperature conditions. The low on-resistance (Rds On) of 2.6 mOhm at 50 A and 4.5 V gate-source voltage highlights its efficiency.
The BSC026N02KSGAUMA1 offers a maximum power dissipation of 2.8 W (Ta) and 78 W (Tc), supported by a low thermal resistance. Key parameters include a gate charge (Qg) of 52.7 nC at 4.5 V and an input capacitance (Ciss) of 7800 pF at 10 V. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in a PG-TDSON-8-1 (8-PowerTDFN) for surface mounting, it is supplied on a tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 50A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 10 V |
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