BSC025N03LSGATMA1
MOSFET N-CH 30V 25A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC025N03LSGATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This device features a 30V drain-source voltage rating and offers continuous drain current capabilities of 25A at ambient temperature (Ta) and 100A at case temperature (Tc). The low on-resistance is specified as 2.5mOhm maximum at 30A and 10V Vgs. It supports gate drive voltages from 4.5V to 10V. The packaged component in the PG-TDSON-8-5 (8-PowerTDFN) provides 2.5W of power dissipation at Ta and 83W at Tc. Key parameters include a maximum gate charge of 74 nC at 10V Vgs and input capacitance (Ciss) of 6100 pF at 15V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power management applications across automotive, industrial, and consumer electronics sectors requiring efficient switching and low power loss. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 15 V |