BSC024NE2LSATMA1
MOSFET N-CH 25V 25A/110A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC024NE2LSATMA1 is an N-channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 25V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 25A at 25°C ambient temperature, scaling to 110A under test conditions at case temperature. The device exhibits a low on-resistance (Rds On) of 2.4mOhm at 30A and 10V Vgs, ensuring minimal conduction losses. With a maximum power dissipation of 2.5W (Ta) and 48W (Tc), it is suitable for demanding thermal environments. The BSC024NE2LSATMA1 is housed in a compact PG-TDSON-8-5 package, facilitating efficient heat transfer for surface mount applications. Key electrical parameters include a gate charge (Qg) of 23nC at 10V Vgs and input capacitance (Ciss) of 1700pF at 12V Vds. This MOSFET is commonly utilized in automotive systems, industrial power supplies, and consumer electronics where high current density and low power loss are critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-5 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 12 V |
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