BSC024N025S G
MOSFET N-CH 25V 27A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC024N025S-G is a 25V N-Channel Power MOSFET in a PG-TDSON-8-1 package. This device offers a continuous drain current of 27A at 25°C ambient and 100A at 25°C case temperature. Featuring a low on-resistance of 2.4 mOhm at 50A and 10V, it supports 4.5V to 10V gate drive voltages. Key parameters include a maximum gate charge of 52 nC at 5V and an input capacitance of 6530 pF at 15V. Power dissipation is rated at 2.8W (Ta) and 89W (Tc). The operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial power management. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 90µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6530 pF @ 15 V |
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