BSC022N04LSATMA1
MOSFET N-CH 40V 100A TDSON-8-6Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC022N04LSATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 100 A at 25°C (Tc). The BSC022N04LSATMA1 offers a low on-resistance (Rds On) of 2.2 mOhm maximum at 50 A and 10 V, with efficient operation across a drive voltage range of 4.5 V to 10 V.
The device is housed in a PG-TDSON-8-6 package, suitable for surface mounting and supplied on tape and reel. Key electrical parameters include a maximum gate charge (Qg) of 37 nC at 10 V and input capacitance (Ciss) of 2600 pF at 20 V. Power dissipation is rated at 2.5 W (Ta) and 69 W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 20 V |
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