BSC022N03SG
MOSFET N-CH 30V 28A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC022N03SG is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage and offers continuous drain current capabilities of 28A at 25°C ambient and 100A at 25°C case temperature. The BSC022N03SG exhibits a low on-resistance of 2.2mOhm maximum at 50A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 2.8W (Ta) and 104W (Tc), it is suitable for demanding thermal environments. Key parameters include a gate charge of 64 nC at 5V and input capacitance of 8290 pF at 15V. This MOSFET is housed in an 8-PowerTDFN (PG-TDSON-8-1) package, facilitating surface mounting. It operates across a temperature range of -55°C to 150°C. Applications include automotive power systems and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 110µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8290 pF @ 15 V |
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