BSC020N03MSGATMA1
MOSFET N-CH 30V 25A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC020N03MSGATMA1 is a 30V N-Channel Power MOSFET in a PG-TDSON-8-1 package, designed for high-efficiency power conversion applications. This device offers a continuous drain current capability of 25A at ambient temperature and up to 100A at case temperature, with a maximum power dissipation of 2.5W (Ta) and 96W (Tc). Featuring a low on-resistance of 2mOhm at 30A and 10V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V and exhibits a maximum gate charge of 124 nC at 10V. Input capacitance is rated at 9600 pF maximum. Operating temperature range is -55°C to 150°C. This component is suitable for automotive, industrial, and consumer electronics power management circuits. Supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 96W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 124 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600 pF @ 15 V |
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