BSC020N025S G
MOSFET N-CH 25V 30A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSC020N025S-G is a 25V N-channel Power MOSFET in a PG-TDSON-8-1 package. This device offers a continuous drain current of 30A at ambient temperature and 100A at case temperature, with a maximum power dissipation of 2.8W (Ta) and 104W (Tc). Key specifications include a low Rds(on) of 2mOhm at 50A and 10V, a gate charge of 66 nC at 5V, and input capacitance of 8290 pF at 15V. It supports gate drive voltages from 4.5V to 10V and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for applications in automotive, industrial power, and power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 110µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8290 pF @ 15 V |
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