BSC019N02KSGAUMA1
MOSFET N-CH 20V 30A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC019N02KSGAUMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage and offers continuous drain current capabilities of 30A at ambient temperature and 100A at case temperature. With a low Rds(on) of 1.95mOhm at 50A and 4.5V Vgs, it minimizes conduction losses. The device is packaged in a PG-TDSON-8-1 (8-PowerTDFN) for efficient thermal management and surface mounting. Key parameters include a maximum gate charge of 85 nC at 4.5V and input capacitance of 13000 pF at 10V. This MOSFET is suitable for power management, automotive, and industrial automation sectors. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95mOhm @ 50A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 104W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 350µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 10 V |
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