BSC018NE2LSIATMA1
MOSFET N-CH 25V 29A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC018NE2LSIATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 25 V drain-source voltage and a continuous drain current of 29 A at 25°C ambient, with a higher thermal capacity of 100 A when referenced to case temperature. The device offers a low on-resistance of 1.8 mOhm maximum at 30 A and 10 V gate-source voltage, indicative of its high efficiency.
Designed for surface mount applications, the BSC018NE2LSIATMA1 utilizes the PG-TDSON-8-6 package, also known as 8-PowerTDFN, ensuring excellent thermal performance with a maximum power dissipation of 2.5 W (Ta) and 69 W (Tc). Key electrical characteristics include input capacitance (Ciss) of 2500 pF at 12 V and gate charge (Qg) of 36 nC at 10 V. The operating temperature range is -55°C to 150°C. This device is suitable for demanding applications in automotive and industrial power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 12 V |
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