BSC017N04NSGATMA1
MOSFET N-CH 40V 30A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC017N04NSGATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a 40V drain-source breakdown voltage and offers a continuous drain current rating of 30A at 25°C ambient and 100A at 25°C case temperature. With a low on-resistance of 1.7mOhm at 50A and 10V Vgs, it minimizes conduction losses. The MOSFET is packaged in a PG-TDSON-8-1 (8-PowerTDFN) for efficient thermal management, supporting a maximum power dissipation of 2.5W (Ta) and 139W (Tc). Key parameters include a gate charge of 108 nC at 10V Vgs and input capacitance of 8800 pF at 20V Vds. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial, and power supply applications where robust and efficient switching is critical.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 85µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 20 V |
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