BSC016N04LSGATMA1
MOSFET N-CH 40V 31A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC016N04LSGATMA1 is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and offers a continuous drain current of 31A at ambient temperature (Ta) and 100A at case temperature (Tc). With a maximum on-resistance (Rds On) of 1.6mOhm at 50A and 10V gate-source voltage (Vgs), it provides efficient power switching. The device supports a wide drive voltage range from 4.5V to 10V. Key parameters include a maximum gate charge of 150 nC at 10V and input capacitance (Ciss) of 12000 pF at 20V. The power dissipation is rated at 2.5W (Ta) and 139W (Tc). The BSC016N04LSGATMA1 is housed in a PG-TDSON-8-1 package for surface mounting and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 20 V |
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