BSC016N03LSGATMA1
MOSFET N-CH 30V 32A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel Power MOSFET, part number BSC016N03LSGATMA1. This 30V device features a low Rds(on) of 1.6mOhm at 30A and 10V Vgs, with a continuous drain current capability of 32A (Ta) and 100A (Tc). Designed for efficient power management, it offers a maximum power dissipation of 2.5W (Ta) and 125W (Tc). The BSC016N03LSGATMA1 utilizes a PG-TDSON-8-1 package, suitable for surface mounting and supplied on tape and reel. Key electrical parameters include a gate charge of 131 nC (max) at 10V Vgs and input capacitance of 10000 pF (max) at 15V Vds. Operating temperature range is -55°C to 150°C. This component is widely employed in automotive applications, power supplies, and power management circuits.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 15 V |
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