BSC014N03MSGATMA1
MOSFET N-CH 30V 30A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSC014N03MSGATMA1, an N-Channel Power MOSFET from the OptiMOS™ series. This component features a Drain-to-Source Voltage (Vdss) of 30 V, with a continuous drain current capability of 30 A at ambient temperature (Ta) and 100 A at case temperature (Tc). The device achieves a low on-resistance (Rds On) of 1.4 mOhm at 30 A and 10 V. Power dissipation is rated at 2.5 W (Ta) and 139 W (Tc). Key characteristics include a maximum gate charge (Qg) of 173 nC at 10 V and input capacitance (Ciss) of 13000 pF at 15 V. Designed for surface mounting, it utilizes the PG-TDSON-8-1 package. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications within the automotive and industrial sectors, commonly found in power management and switching circuits.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 15 V |
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