BSC014N03LSGATMA1
MOSFET N-CH 30V 34A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ BSC014N03LSGATMA1 is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current rating of 34A at 25°C ambient (Ta) and 100A at 25°C case (Tc). The device exhibits a low on-resistance (Rds On) of a maximum of 1.4mOhm at 30A and 10V gate-source voltage (Vgs). Power dissipation capabilities are 2.5W (Ta) and 139W (Tc). The BSC014N03LSGATMA1 is housed in an 8-PowerTDFN package (PG-TDSON-8-1) for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 131 nC at 10V Vgs and an input capacitance (Ciss) of 10000 pF at 15V Vds. Operating temperature range is from -55°C to 150°C. Drive voltage for minimum Rds On is 10V, with a maximum of 4.5V. This MOSFET is suitable for use in automotive and industrial power supply systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 131 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 15 V |