BSC011N03LSTATMA1
MOSFET N-CH 30V 39A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSC011N03LSTATMA1 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage (Vds) and offers a continuous drain current (Id) of 39A at 25°C ambient temperature and 100A when measured at the case. With a low on-resistance (Rds On) of 1.1mOhm at 30A and 10V, it minimizes conduction losses. The MOSFET supports gate drive voltages from 4.5V to 10V, with a maximum gate charge (Qg) of 48nC at 4.5V. Power dissipation is rated at 3W ambient (Ta) and 115W at the case (Tc). Packaged in a PG-TDSON-8 FL, this surface mount component is suitable for demanding applications across automotive, industrial, and consumer electronics sectors where efficient power switching is critical. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 115W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6300 pF @ 15 V |
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