BSC010N04LSTATMA1
MOSFET N-CH 40V 39A/100A TDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC010N04LSTATMA1 is an N-Channel Power MOSFET from the OptiMOS™ series. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 39A at 25°C ambient temperature, increasing to 100A at 25°C case temperature. With a low on-resistance (Rds On) of 1mOhm at 50A and 10V gate-source voltage, it offers efficient power handling. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a gate charge (Qg) of 133nC at 10V and input capacitance (Ciss) of 9520pF at 20V. The power dissipation is rated at 3W (Ta) and 167W (Tc). This MOSFET is housed in a PG-TDSON-8 FL surface mount package, often utilized in automotive and industrial power management applications. It is supplied on tape and reel for automated assembly.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9520 pF @ 20 V |
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