BSC010N04LSCATMA1
MOSFET N-CH 40V 282AManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC010N04LSCATMA1 is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) rating of 282A at 25°C case temperature. The low on-resistance (Rds On) of 1.05mOhm at 50A and 10V gate-source voltage, coupled with a maximum power dissipation of 139W (Tc), makes it suitable for demanding power conversion and management tasks. Key parameters include a gate charge (Qg) of 133 nC at 10V and an input capacitance (Ciss) of 9500 pF at 20V. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This component is commonly utilized in automotive, industrial power, and renewable energy systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 97 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Mounting Type | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 282A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 139W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 133 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9500 pF @ 20 V |
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