BSC005N03LS5IATMA1
TRENCH <= 40VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSC005N03LS5IATMA1 is an N-channel MOSFET designed for high-efficiency power conversion. This component features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 42A at 25°C ambient and 433A at 25°C case. The low on-resistance of 0.55mOhm at 50A and 10V gate drive, coupled with a maximum power dissipation of 3W (ambient) and 188W (case), makes it suitable for demanding applications. Key parameters include a gate charge of 128 nC at 10V and input capacitance of 8000 pF at 15V. Operating across a temperature range of -55°C to 175°C, this device is housed in an 8-PowerTDFN (PG-TDSON-8 FL) surface-mount package, supplied on a tape and reel. Its robust performance characteristics find application in automotive, industrial power supplies, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta), 433A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.55mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 188W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 10mA |
| Supplier Device Package | PG-TDSON-8 FL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8000 pF @ 15 V |
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