BSB165N15NZ3GXUMA2
TRENCH >=100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies BSB165N15NZ3GXUMA2 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 150 V and a continuous drain current capability of 9 A at ambient temperature and 45 A at case temperature. With a low on-resistance (Rds On) of 16.5 mOhm at 30 A and 10 V gate drive, it minimizes conduction losses. The MOSFET exhibits an input capacitance (Ciss) of 2800 pF at 75 V and a gate charge (Qg) of 35 nC at 10 V. It operates within a temperature range of -40°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20 V. The BSB165N15NZ3GXUMA2 is housed in a DirectFET™ Isometric MZ package (MG-WDSON-2-9) and is supplied on tape and reel. This component is suitable for use in power supply, automotive, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MZ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| Supplier Device Package | MG-WDSON-2-9 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 75 V |
| Qualification | - |
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