BSB165N15NZ3GXUMA1
MOSFET N-CH 150V 9A/45A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the BSB165N15NZ3GXUMA1, an N-Channel OptiMOS™ MOSFET featuring a 150V drain-source voltage. This surface mount device offers a continuous drain current of 9A at ambient temperature (Ta) and 45A at case temperature (Tc), with a maximum power dissipation of 2.8W (Ta) and 78W (Tc). The Rds On is specified at a maximum of 16.5mOhm at 30A and 10V gate-source voltage. Key parameters include a gate charge of 35nC (max) at 10V Vgs and an input capacitance of 2800pF (max) at 75V Vds. The device operates within a temperature range of -40°C to 150°C. The MG-WDSON-2, CanPAK M™ package, also known as 3-WDSON, is supplied on tape and reel. This component finds application in power management and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 75 V |
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