BSB104N08NP3GXUSA1
MOSFET N-CH 80V 13A/50A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSB104N08NP3GXUSA1, features an 80V drain-source breakdown voltage and a continuous drain current of 13A at 25°C ambient and 50A at 25°C case temperature. This device offers a low on-resistance of 10.4mOhm at 10A and 10V Vgs. The MOSFET is housed in a 3-WDSON (MG-WDSON-2, CanPAK M™) surface mount package, suitable for high-density applications. Key parameters include a gate charge of 31 nC (max) at 10V Vgs and input capacitance of 2100 pF (max) at 40V Vds. Maximum power dissipation is rated at 2.8W (Ta) and 42W (Tc). Operating temperature ranges from -40°C to 150°C. This MOSFET is utilized in industrial and automotive power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 40 V |
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