BSB104N08NP3GXUMA3
TRENCH 40<-<100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSB104N08NP3GXUMA3 is an 80V N-Channel Power MOSFET designed for demanding applications. This device offers a continuous drain current of 13A at 25°C ambient and 50A at 25°C case temperature, with a low on-resistance of 10.4mOhm at 10A and 10V. The BSB104N08NP3GXUMA3 features a maximum power dissipation of 2.8W ambient and 42W case, and a gate charge of 31 nC at 10V. Its input capacitance (Ciss) is 2100 pF at 40V. Packaged in a DirectFET™ Isometric MP (MG-WDSON-2-6) for efficient thermal management, this MOSFET is suitable for automotive, industrial, and power supply applications. The operating junction temperature range is -40°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 98 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MP |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | MG-WDSON-2-6 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 40 V |
| Qualification | - |
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