BSB056N10NN3GXUMA1
MOSFET N-CH 100V 9A/83A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSB056N10NN3GXUMA1, offers a 100V drain-source breakdown voltage. This device features a low on-resistance of 5.6 mOhm at 30A drain current and 10V gate-source voltage, with continuous drain current ratings of 9A (ambient) and 83A (case). The MOSFET is housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™) for surface mounting and supports a wide operating temperature range of -40°C to 150°C. Maximum power dissipation is 2.8W (ambient) and 78W (case). Key parameters include a maximum gate charge of 74 nC at 10V and input capacitance of 5500 pF at 50V. This component is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta), 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 50 V |
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