BSB053N03LP G
MOSFET N-CH 30V 17A/71A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ MOSFET N-Channel, part number BSB053N03LP-G. This 30 V device features a low on-resistance of 5.3 mOhm at 30A and 10V Vgs. It offers continuous drain current capabilities of 17A at ambient temperature and 71A at case temperature. The device is housed in a compact 3-WDSON (MG-WDSON-2, CanPAK M™) package suitable for surface mount applications. Key parameters include a maximum gate charge of 29 nC and input capacitance of 2700 pF. Power dissipation is rated at 2.3W (Ta) and 42W (Tc). This MOSFET is utilized in automotive, industrial power control, and consumer electronics applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 15 V |
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