BSB044N08NN3GXUMA1
MOSFET N-CH 80V 18A/90A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSB044N08NN3GXUMA1 is an N-Channel Power MOSFET designed for demanding applications. This component features an 80V drain-to-source voltage (Vdss) and supports a continuous drain current of 18A at ambient temperature (Ta) and 90A at case temperature (Tc). The device offers a low on-resistance (Rds On) of 4.4mOhm at 30A and 10V Vgs, with a maximum Rds On specified at 10V drive voltage. It exhibits a gate charge (Qg) of 73 nC maximum at 10V Vgs and input capacitance (Ciss) of 5700 pF maximum at 40V Vds. The power dissipation is rated at 2.2W (Ta) and 78W (Tc). This MOSFET is housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™) suitable for surface mounting and is supplied on a tape and reel. Its robust thermal performance and high current capability make it suitable for use in automotive and industrial power systems. The operating temperature range is -40°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 97µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 40 V |
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