BSB028N06NN3GXUMA2
TRENCH 40<-<100VManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies BSB028N06NN3GXUMA2 is a 60 V N-Channel MOSFET designed for demanding applications. This surface mount device, packaged in a MG-WDSON-5-3 (DirectFET™ Isometric MN), offers a continuous drain current of 22A (Ta) and 90A (Tc) at 25°C. Key electrical parameters include a maximum Rds On of 2.8mOhm at 30A and 10V, with a gate charge of 143 nC at 10V. Input capacitance (Ciss) is rated at 12000 pF at 30V. The MOSFET supports a gate-source voltage range up to ±20V and a threshold voltage of 4V at 102µA. Power dissipation is 2.2W (Ta) and 78W (Tc). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric MN |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 102µA |
| Supplier Device Package | MG-WDSON-5-3 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 30 V |
| Qualification | - |
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