BSB028N06NN3GXUMA1
MOSFET N-CH 60V 22A/90A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSB028N06NN3GXUMA1, is a 60V device featuring a low Rds(on) of 2.8mOhm at 30A and 10V. This surface mount component, available in Tape & Reel, offers continuous drain current capabilities of 22A at ambient temperature and 90A at case temperature. Its high power dissipation rating of 2.2W (Ta) and 78W (Tc) is supported by the MG-WDSON-2, CanPAK M™ package. Key electrical parameters include a gate charge of 143 nC at 10V and input capacitance of 12000 pF at 30V. The operating temperature range is -40°C to 150°C. This MOSFET is utilized in applications such as power supplies, industrial motor control, and automotive power management.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 78W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 102µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 30 V |
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