BSB019N03LX G
MOSFET N-CH 30V 32A/174A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSB019N03LX-G, offers a 30V Vds rating and is suitable for demanding applications. This device features a low Rds(on) of 1.9mOhm at 30A and 10V Vgs, with continuous drain current capabilities of 32A at ambient temperature and 174A at case temperature. The MG-WDSON-2, CanPAK M™ package provides a robust thermal solution, supporting power dissipation of up to 2.8W (Ta) and 89W (Tc). Key parameters include a gate charge (Qg) of 92 nC at 10V and input capacitance (Ciss) of 8400 pF at 15V. Operating temperature range is -40°C to 150°C. This MOSFET is commonly utilized in automotive and industrial power management systems. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 174A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 15 V |
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