BSB017N03LX3 G
MOSFET N-CH 30V 32A/147A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSB017N03LX3-G is an N-channel Power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage and offers a continuous drain current capability of 32A at 25°C ambient (2.8W power dissipation) and 147A at 25°C case temperature (57W power dissipation). The low on-resistance of 1.7mOhm at 30A and 10V gate-source voltage is achieved with a 10V gate drive. Key parameters include a gate charge of 102 nC (max) at 10V and input capacitance of 7800 pF (max) at 15V. The MOSFET is housed in an MG-WDSON-2, CanPAK M™ (3-WDSON) surface-mount package, supplied on tape and reel. Operating temperature range is from -40°C to 150°C (TJ). This component is suitable for applications in automotive, industrial power supplies, and motor control.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 147A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 15 V |
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