BSB015N04NX3GXUMA1
MOSFET N-CH 40V 36A/180A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSB015N04NX3GXUMA1 is an N-channel power MOSFET designed for demanding applications. This device features a 40V drain-source voltage rating and a continuous drain current capability of 36A at 25°C ambient temperature, scaling to 180A under continuous case temperature conditions. The low on-resistance of 1.5mOhm at 30A and 10V gate drive voltage minimizes conduction losses. Optimized for thermal performance, it offers a maximum power dissipation of 2.8W (Ta) and 89W (Tc). Key characteristics include a maximum gate charge of 142 nC at 10V and an input capacitance of 12000 pF at 20V. The MG-WDSON-2, CanPAK M™ package facilitates efficient surface mounting and thermal management. This component is suitable for use in power management, automotive, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 20 V |
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