BSB014N04LX3GXUMA1
MOSFET N-CH 40V 36A/180A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSB014N04LX3GXUMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 40 V and offers a continuous drain current (Id) of 36 A at 25°C ambient temperature, scaling to 180 A under typical case temperature conditions. With a low on-resistance (Rds On) of 1.4 mOhm at 30 A and 10 V Vgs, it minimizes conduction losses. The device is housed in a compact 3-WDSON (MG-WDSON-2) package, suitable for surface mounting and often found in automotive and industrial power management systems. Key electrical parameters include a maximum gate charge (Qg) of 196 nC at 10 V Vgs and input capacitance (Ciss) of 16900 pF at 20 V Vds. Operating temperature ranges from -40°C to 150°C. This MOSFET is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16900 pF @ 20 V |
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