BSB013NE2LXIXUMA1
MOSFET N-CH 25V 36A/163A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSB013NE2LXIXUMA1 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 25 V and offers exceptional current handling capabilities, with a continuous drain current (Id) of 36A at 25°C (ambient) and 163A at 25°C (case). The ultra-low on-resistance (Rds On) of 1.3mOhm at 30A and 10V drive voltage, coupled with a maximum power dissipation of 57W at case temperature, makes it ideal for power conversion, motor control, and power management solutions.
The BSB013NE2LXIXUMA1 utilizes advanced OptiMOS™ technology for enhanced efficiency and reliability. It is packaged in a compact 3-WDSON (MG-WDSON-2, CanPAK M™) surface mount configuration, supplied on tape and reel for automated assembly. Key electrical characteristics include a gate charge (Qg) of 62 nC (max) at 10V and input capacitance (Ciss) of 4400 pF (max) at 12V. Operating temperatures range from -40°C to 150°C (TJ). This component is widely used in automotive, industrial, and computing sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 163A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 12 V |
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