BSB012NE2LXIXUMA1
MOSFET N-CH 25V 170A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number BSB012NE2LXIXUMA1, is designed for high-performance power management applications. This 25V device features a low Rds(on) of 1.2mOhm at 30A and 10V Vgs, enabling efficient power transfer. With a continuous drain current capability of 170A at 25°C (Tc), it supports demanding load conditions. The MOSFET is housed in a compact 3-WDSON (MG-WDSON-2, CanPAK M™) surface mount package, facilitating efficient thermal management with a maximum power dissipation of 57W at 25°C (Tc). Key electrical parameters include a gate charge (Qg) of 82 nC at 10V and input capacitance (Ciss) of 5852 pF at 12V. This component finds application in automotive power systems and industrial power supplies. It operates across a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5852 pF @ 12 V |
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