BSB012NE2LX
MOSFET N-CH 25V 37A/170A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ series N-Channel MOSFET, part number BSB012NE2LX. This 25V device features a maximum continuous drain current of 37A at ambient temperature and 170A at case temperature. The BSB012NE2LX offers a low on-resistance of 1.2mOhm at 30A and 10V Vgs, with a maximum power dissipation of 2.8W (Ta) and 57W (Tc). It has a gate charge of 67 nC maximum at 10V Vgs and input capacitance of 4900 pF maximum at 12V Vds. The component is housed in a 3-WDSON package (MG-WDSON-2, CanPAK M™) suitable for surface mounting and is supplied on tape and reel. Typical applications include automotive power management and industrial motor control. Operating temperature range is -40°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Ta), 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 57W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4900 pF @ 12 V |