BSB012N03LX3 G
MOSFET N-CH 30V 39A/180A 2WDSONManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ BSB012N03LX3-G is an N-channel power MOSFET designed for high-efficiency power conversion applications. This device features a 30 V drain-source voltage rating and offers substantial current handling capabilities with 39 A continuous drain current at 25°C ambient and 180 A continuous drain current at case temperature. The low on-resistance of 1.2 mOhm at 30 A and 10 V gate-source voltage, coupled with a maximum gate charge of 169 nC at 10 V, ensures minimal conduction and switching losses.
The MOSFET is housed in a compact 3-WDSON (MG-WDSON-2, CanPAK M™) surface mount package, facilitating dense board layouts and effective thermal management, with a maximum power dissipation of 2.8 W (Ta) and 89 W (Tc). Operating over a temperature range of -40°C to 150°C, it is suitable for demanding environments. Key applications include automotive power systems, industrial power supplies, and server power solutions. The device supports a gate drive voltage range from 4.5 V to 10 V, with a maximum gate-source voltage of ±20 V. This component is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-WDSON |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 39A (Ta), 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | MG-WDSON-2, CanPAK M™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 169 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16900 pF @ 15 V |
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